The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2024
Filed:
Sep. 16, 2021
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Moriz Jelinek, Villach, AT;
Paul Ellinghaus, Unterhaching, DE;
Axel Koenig, Villach, AT;
Caspar Leendertz, Munich, DE;
Hans-Joachim Schulze, Taufkirchen, DE;
Werner Schustereder, Villach, AT;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/265 (2006.01); H01L 21/04 (2006.01); H01L 29/04 (2006.01); H01L 29/16 (2006.01); H01L 29/167 (2006.01);
U.S. Cl.
CPC ...
H01L 21/047 (2013.01); H01L 29/045 (2013.01); H01L 29/1608 (2013.01);
Abstract
A method includes orienting a silicon carbide layer to a first crystal channel direction relative to a first ion beam and implanting phosphorous into the silicon carbide layer using the first ion beam to define a first doped region in the silicon carbide layer. A deviation angle between the first crystal channel direction and the first ion beam is less than ±1° and the first crystal channel direction comprises a <0001> direction or a <11-23> direction.