The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2024
Filed:
Oct. 14, 2021
Applicant:
Versum Materials Us, Llc, Tempe, AZ (US);
Inventors:
Manchao Xiao, Tempe, AZ (US);
Matthew R MacDonald, Tempe, AZ (US);
Assignee:
Versum Materials US, LLC, Tempe, AZ (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C07F 7/10 (2006.01); C23C 16/34 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); C23C 16/56 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02222 (2013.01); C07F 7/10 (2013.01); C23C 16/345 (2013.01); C23C 16/402 (2013.01); C23C 16/45553 (2013.01); C23C 16/56 (2013.01); H01L 21/02126 (2013.01); H01L 21/02164 (2013.01); H01L 21/0217 (2013.01); H01L 21/02216 (2013.01); H01L 21/02274 (2013.01); H01L 21/02277 (2013.01); H01L 21/0228 (2013.01); H01L 21/0234 (2013.01);
Abstract
Described herein are functionalized cyclosilazane precursor compounds and compositions and methods comprising same to deposit a silicon-containing film such as, without limitation, silicon oxide, silicon nitride, silicon oxynitride, silicon carbonitride, silicon oxycarbonitride, or carbon-doped silicon oxide via a thermal atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) process, or a combination thereof.