The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 06, 2024

Filed:

Dec. 16, 2020
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Chishio Koshimizu, Miyagi, JP;

Gen Tamamushi, Miyagi, JP;

Masahiro Inoue, Miyagi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/00 (2006.01); H01J 37/32 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32155 (2013.01); H01J 37/32082 (2013.01); H01J 37/32146 (2013.01); H01J 37/32174 (2013.01); H01J 37/32715 (2013.01);
Abstract

An apparatus, method, and non-transitory computer-readable medium reduces the power level of a reflected wave from a load coupled to a radio-frequency power supply. A plasma processing apparatus includes a chamber, a substrate support, a radio-frequency power supply, a bias power supply, and a controller. The bias power supply periodically applies a pulsed negative voltage to the substrate support. The controller controls the radio-frequency power supply to provide radio-frequency power with a changed frequency within a period in which the pulsed negative voltage is applied from the bias power supply to the substrate support, to reduce a power level of a reflected wave from a load that is coupled to the radio-frequency power supply.


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