The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2024
Filed:
Aug. 12, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor device includes a semiconductor layer, a drift region, a source area, a well region, a drain area, and a dielectric film. The drift region and the source area are formed in the semiconductor layer. The well region is formed in the semiconductor layer and between the drift region and the source area. The drain area is formed in the drift region. The dielectric film is formed in the drift region and is located between the source area and the drain area. The dielectric film includes a proximate end portion and a distal end portion which are proximate to and distal from the source area, respectively, and which are asymmetrical to each other.