The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2024
Filed:
Aug. 27, 2021
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Nan Wang, Shanghai, CN;
Abstract
Semiconductor device and fabrication method are provided by providing initial fins discretely arranged on a substrate; forming an isolation structure on the substrate; forming a connecting layer on sidewalls of the initial fins and between adjacent initial fins; forming a dummy gate structure across the initial fins and the connecting layer on the substrate, covering sidewalls of the connecting layer and a portion of a top surface of the initial fins; forming grooves in the initial fins on both sides of the dummy gate structure, and forming source and drain doped layers in the grooves; forming a dielectric layer on the substrate, covering sidewalls of the dummy gate structure and the source and drain doped layers, that a top surface of the dielectric layer is flush with a top surface of the dummy gate structure; and removing the dummy gate structure to form a gate structure.