The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 30, 2024

Filed:

Sep. 14, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Po-Lin Peng, Hsinchu, TW;

Han-Jen Yang, Taipei, TW;

Jam-Wem Lee, Hsinchu, TW;

Li-Wei Chu, Taipei, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 23/528 (2006.01); H01L 27/07 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/861 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0277 (2013.01); H01L 23/5286 (2013.01); H01L 27/0722 (2013.01); H01L 29/0649 (2013.01); H01L 29/1083 (2013.01); H01L 29/861 (2013.01);
Abstract

An electrostatic discharge (ESD) protection device having a source region coupled to a first electrical node, a first drain region coupled to a second electrical node different from the first electrical node, and an extended drain region between the source region and the first drain region. The extended drain region includes a number N of electrically floating doped regions and a number M of gate regions coupled to the second electrical node, where N and M are integers greater than 1 and N is equal to M. Each electrically floating doped region of the N number of floating doped regions alternates with each gate region of the M number of gate regions.


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