The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2024
Filed:
Nov. 11, 2021
Globalfoundries U.s. Inc., Malta, NY (US);
Sagar Premnath Karalkar, Malden, MA (US);
Prantik Mahajan, Dresden, DE;
Jie Zeng, Singapore, SG;
Ajay Ajay, Aligarh, IN;
Milova Paul, Singapore, SG;
Souvick Mitra, Essex Junction, VT (US);
GlobalFoundries U.S. Inc., Malta, NY (US);
Abstract
Disclosed is a semiconductor structure including a semiconductor substrate (e.g., a P-substrate) and a symmetric BDSCR. The BDSCR includes, within the substrate, a first well (e.g., a low-doped deep Nwell) and, within the first well, symmetric side sections and a middle section positioned laterally between the side sections. Each side section includes: second and third wells (e.g., Pwells), where the third well is shallower than and has a higher conductivity level than the second well. Each middle section includes multiple floating wells including: two fourth wells (e.g., Nwells), which have a higher conductivity level than the first well, and a fifth well (e.g., another Pwell), which is positioned laterally between and shallower than the fourth wells. By incorporating the floating wells into the middle section, high current tolerance is improved.