The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2024
Filed:
Jul. 13, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Kuei-Lun Lin, Keelung, TW;
Yen-Fu Chen, Taipei, TW;
Da-Yuan Lee, Jhubei, TW;
Tsung-Da Lin, Pingtung County, TW;
Chi On Chui, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A method for forming a semiconductor device structure is provided. The method includes providing a substrate and an insulating layer over the substrate. The method includes depositing a gate dielectric layer over the insulating layer and in the wide trench and the narrow trench using an atomic layer deposition process. The method includes forming a gate electrode layer over the gate dielectric layer. The method includes removing the gate dielectric layer and the gate electrode layer outside of the wide trench and the narrow trench.