The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 30, 2024

Filed:

May. 14, 2021
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Maju Tomura, Miyagi, JP;

Ryohei Takeda, Miyagi, JP;

Ryuichi Takashima, Korea, JP;

Yoshinobu Ooya, Miyagi, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32642 (2013.01); H01J 37/32082 (2013.01); H01J 37/32146 (2013.01); H01J 37/32165 (2013.01); H01J 37/32724 (2013.01); H01J 37/32935 (2013.01); H01L 21/31116 (2013.01); H01J 2237/334 (2013.01);
Abstract

A plasma processing apparatus includes a pedestal to receive a substrate thereon; a temperature control mechanism provided in the pedestal; a heat transfer gas supply mechanism configured to supply a heat transfer gas to a back surface of the substrate; a first radio frequency power source configured to output first high frequency power having a first frequency; a second radio frequency power source configured to output second high frequency power having a second frequency that is lower than the first frequency; and a temperature measurement unit configured to control a surface temperature of the substrate to have a temperature lower than −35 degrees C. by using the temperature control mechanism provided in the pedestal and to perform feedback control of stopping the output of the second radio frequency power from the second radio frequency power source.


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