Sense circuit and high-speed memory structure incorporating the sense circuit

Abstract

Disclosed is a sense circuit with first and second branches connected to first and second inputs of an amplifier. The first branch includes series-connected first transistors between a voltage rail and a data line and a first node between two first transistors and connected to the first input. First transistors on either side of the first node receive corresponding gate bias voltages. The second branch includes series-connected second transistors between the voltage rail and a reference device and a second node between two second transistors and connected to the second input. One first transistor and one second transistor share a common control signal. The first and second branches independently and concurrently generate data and reference voltages on the first and second nodes and the difference between them is sensed by the amplifier. Also disclosed are a non-volatile memory structure incorporating the sense circuit and a method.