The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2024
Filed:
Sep. 13, 2021
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/12 (2006.01); G11C 7/06 (2006.01); G11C 11/4091 (2006.01); G11C 11/4094 (2006.01); G11C 11/4097 (2006.01); G11C 11/4074 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4091 (2013.01); G11C 7/06 (2013.01); G11C 11/4094 (2013.01); G11C 11/4097 (2013.01); G11C 7/12 (2013.01); G11C 11/4074 (2013.01); G11C 2207/002 (2013.01); G11C 2207/005 (2013.01);
Abstract
Apparatuses, systems, and methods for single-ended sense amplifiers. A memory device may include a number of sense amplifiers used to read the voltage of memory cells along digit lines. Double-ended sense amplifiers are coupled to two digit lines. Single-ended sense amplifiers are coupled to a single digit line. The memory cells of an edge word line of a memory array may alternately be coupled to a single-ended sense amplifier or a double-ended sense amplifier. The use of single-ended sense amplifiers may reduce a footprint for a given number of memory cells in the array.