The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 30, 2024

Filed:

May. 24, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Kong-Beng Thei, Pao-Shan Village, TW;

Jung-Hui Kao, Hsin-Chu, TW;

Jing-Jung Huang, Zhudong Township, Hsinchu County, TW;

Fu-Hsiung Yang, Zhongli, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 31/28 (2006.01);
U.S. Cl.
CPC ...
G01R 31/2831 (2013.01); G01R 31/2884 (2013.01);
Abstract

A plurality of devices for testing, connected in series using one or more redistribution layers (RDLs), are used to perform a semiconductor device test on a plurality of dies. As a result, the semiconductor device test may support thousands of gross dies per wafer or greater (e.g., 10,000 dies or greater). Furthermore, the RDL(s) may be removed after use. In some implementations, the devices for testing corresponding to the dies may execute the semiconductor device test sequentially. Accordingly, test data may be generated and may include a bit sequence, where a first bit in the bit sequence indicates an overall outcome for the test and one or more subsequent bits in the bit sequence indicate respective outcomes for each semiconductor dies or for each line of the semiconductor device test.


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