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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12048155 B1

PDFFull Text
Date of Patent:
Jul. 23, 2024

Filed:

Aug. 09, 2021

Semiconductor memory device and manufacturing method of the semiconductor memory device

Applicant:

SK Hynix Inc., Icheon-si Gyeonggi-do, KR;

Inventors:

Dong Hwan Lee, Icheon-si Gyeonggi-do, KR;

Seo Hyun Kim, Icheon-si Gyeonggi-do, KR;

Eun Seok Choi, Icheon-si Gyeonggi-do, KR;

Assignee:

SK hynix inc., Icheon-si, KR;

Attorney:

WILLIAM PARK & ASSOCIATES LTD.

Primary Examiner:

Thanh Y Tran

Int. Cl.
CPC ...
H10B 43/27 (2023.01); H01L 23/00 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01); H01L 25/18 (2023.01); H10B 41/27 (2023.01); H10B 41/41 (2023.01); H10B 43/40 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H01L 24/08 (2013.01); H01L 24/80 (2013.01); H01L 25/0657 (2013.01); H01L 25/18 (2013.01); H01L 25/50 (2013.01); H10B 41/27 (2023.02); H10B 41/41 (2023.02); H10B 43/40 (2023.02); H01L 2224/08145 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/14511 (2013.01);
Abstract

A semiconductor memory device and a method of manufacturing the semiconductor memory device are provided. The semiconductor memory device includes a channel layer with a first portion and a second portion, the first portion and the second portion extending in a longitudinal direction, a gate stacked structure surrounding the first portion of the channel layer, a first semiconductor layer of a first conductivity type that contacts the second portion of the channel layer, and a second semiconductor layer of a second conductivity type.

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Lee, Dong. (2024). Semiconductor memory device and manufacturing method of the semiconductor memory device (U.S. Patent No. 12048155). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12048155

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