The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 2024
Filed:
Aug. 30, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Yu-Lien Huang, Jhubei, TW;
Yi-Shan Chen, Tainan, TW;
Kuan-Da Huang, Hsinchu County, TW;
Han-Yu Lin, Nantou County, TW;
Li-Te Lin, Hsinchu, TW;
Ming-Huan Tsai, Zhubei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor device comprising a semiconductor channel, an epitaxial structure coupled to the semiconductor channel, and a gate structure electrically coupled to the semiconductor channel. The semiconductor device further comprises a first interconnect structure electrically coupled to the epitaxial structure and a dielectric layer that contains nitrogen. The dielectric layer comprises a first portion protruding from a nitrogen-containing dielectric capping layer that overlays either the gate structure or the first interconnect structure.