The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 2024
Filed:
Nov. 01, 2021
Applicant:
Globalfoundries U.s. Inc., Malta, NY (US);
Inventors:
James P. Mazza, Saratoga Springs, NY (US);
Elizabeth Strehlow, Malta, NY (US);
Motoi Ichihashi, Sunnyvale, CA (US);
Xuelian Zhu, San Jose, CA (US);
Jia Zeng, Sunnyvale, CA (US);
Assignee:
GLOBALFOUNDRIES U.S. Inc., Malta, NY (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 23/528 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42376 (2013.01); H01L 23/5286 (2013.01);
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to a logic cell layout design for high density transistors and methods of manufacture. The structure includes a plurality of active gates in a high density transistor, and at least one dummy gate which is continuous and is adjacent to at least one active gate of the active gates in a multi-row cell of the high density transistor.