The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 23, 2024

Filed:

Aug. 30, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Kuo-Chiang Tsai, Hsinchu, TW;

Jyh-Huei Chen, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/417 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41791 (2013.01); H01L 21/31144 (2013.01); H01L 21/32139 (2013.01); H01L 21/76805 (2013.01); H01L 21/76877 (2013.01); H01L 23/5226 (2013.01); H01L 29/401 (2013.01);
Abstract

An exemplary semiconductor device includes a substrate, a first conductive feature, a second conductive feature, and a third conductive feature over the substrate. The first conductive feature has a first top surface and a side surface. The third conductive feature is on the first top surface of the first conductive feature and is spaced away from the second conductive feature. The third conductive feature has a first sidewall and a second sidewall opposing the first sidewall. The first sidewall extends between the first conductive feature and the second conductive feature. At least a segment of the first sidewall has a first slope. The second sidewall has a second slope. The second slope is greater than the first slope.


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