The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 23, 2024

Filed:

Feb. 27, 2020
Applicant:

Danfoss Silicon Power Gmbh, Flensburg, DE;

Inventors:

Martin Becker, Nordborg, DK;

Dirk Dittmann, Nordborg, DK;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 25/07 (2006.01); H05K 1/18 (2006.01); H05K 3/32 (2006.01);
U.S. Cl.
CPC ...
H01L 24/95 (2013.01); H01L 24/75 (2013.01); H01L 24/83 (2013.01); H05K 3/32 (2013.01); H01L 24/29 (2013.01); H01L 25/071 (2013.01); H01L 25/072 (2013.01); H01L 2224/2929 (2013.01); H01L 2224/29339 (2013.01); H01L 2224/75265 (2013.01); H01L 2224/75315 (2013.01); H01L 2224/7598 (2013.01); H01L 2224/75984 (2013.01); H01L 2224/83001 (2013.01); H01L 2224/83203 (2013.01); H01L 2224/83222 (2013.01); H01L 2224/8384 (2013.01); H01L 2224/95001 (2013.01); H05K 1/18 (2013.01); H05K 2201/10015 (2013.01); H05K 2201/10022 (2013.01); H05K 2201/1003 (2013.01); H05K 2201/10166 (2013.01); H05K 2201/10287 (2013.01); H05K 2203/0182 (2013.01); H05K 2203/0191 (2013.01); H05K 2203/1131 (2013.01); H05K 2203/1509 (2013.01); H05K 2203/1536 (2013.01);
Abstract

A method for manufacturing an electronic component by a pressure-assisted low-temperature sintering process, by using a pressure sintering device having an upper die and a lower die is disclosed. The upper the die and/or the lower die is provided with a first pressure pad, wherein the method includes the following steps: placing a first sinterable component on a first sintering layer provided on a top layer of a first substrate; joining the sinterable component and the top layer of the first substrate to form a first electronic component by pressing the upper die and the lower die towards each other, wherein the sintering device is simultaneously heated.


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