The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 2024
Filed:
May. 20, 2022
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Inventor:
Po-Shu Wang, Hsinchu County, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/31 (2006.01); H01L 21/02 (2006.01); H01L 21/3105 (2006.01); H01L 21/768 (2006.01); H01L 23/29 (2006.01); H01L 23/535 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3171 (2013.01); H01L 21/02131 (2013.01); H01L 21/02164 (2013.01); H01L 21/0217 (2013.01); H01L 21/022 (2013.01); H01L 21/31055 (2013.01); H01L 21/76805 (2013.01); H01L 21/76819 (2013.01); H01L 21/76895 (2013.01); H01L 23/291 (2013.01); H01L 23/3192 (2013.01); H01L 23/535 (2013.01);
Abstract
A semiconductor device includes: a protruding conductive structure that protrudes to a height from a first surface of the semiconductor device; and a first passivation layer, the first passivation layer overlaying the protruding conductive structure by a first thickness, the first passivation layer overlaying the first surface by a second thickness greater than the first thickness, wherein the first passivation layer is planar at a top surface over the first thickness and the second thickness.