The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 2024
Filed:
Jun. 04, 2021
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/324 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 21/762 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/161 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01); H10B 10/00 (2023.01);
U.S. Cl.
CPC ...
H01L 21/3247 (2013.01); H01L 21/02164 (2013.01); H01L 21/0217 (2013.01); H01L 21/02532 (2013.01); H01L 21/02639 (2013.01); H01L 21/30604 (2013.01); H01L 21/76224 (2013.01); H01L 21/823807 (2013.01); H01L 21/823821 (2013.01); H01L 21/823878 (2013.01); H01L 27/092 (2013.01); H01L 29/0665 (2013.01); H01L 29/161 (2013.01); H01L 29/42392 (2013.01); H01L 29/66742 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01); H01L 29/78696 (2013.01); H10B 10/12 (2023.02);
Abstract
A semiconductor device includes a fin structure that protrudes vertically out of a substrate, wherein the fin structure contains silicon germanium (SiGe). An epi-silicon layer is disposed on a sidewall of the fin structure. The epi-silicon layer contains nitrogen. One or more dielectric liner layers are disposed on the epi-silicon layer. A dielectric isolation structure is disposed over the one or more dielectric liner layers.