The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 2024
Filed:
May. 15, 2020
Hitachi High-tech Corporation, Tokyo, JP;
HITACHI HIGH-TECH CORPORATION, Tokyo, JP;
Abstract
A plasma processing apparatus in which each of a plurality of source gas supply paths includes a first valve, a second valve disposed on an upstream side of the first valve, a flow rate regulator disposed between the first valve and the second valve, and a connection unit between the source gas supply path and an inert gas supply path. For each of the source gas supply paths, leakage in the first valve is sequentially determined, in a first inspection step, using a flow rate of the inert gas passing through the flow rate regulator, and in a second inspection step of, supplying the inert gas and detecting the leakage of the first valve on the source gas supply path using a change amount of a pressure of the inert gas if it is not determined in the first inspection step that there is a leakage in the first valve.