The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 23, 2024

Filed:

Jul. 29, 2022
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Wai Leong Chin, Singapore, SG;

Francis Chee Khai Chew, Singapore, SG;

Trismardawi Tanadi, Folsom, CA (US);

Chun Sum Yeung, San Jose, CA (US);

Lawrence Dumalag, Folsom, CA (US);

Ekamdeep Singh, San Jose, CA (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 3/06 (2006.01); G06F 12/06 (2006.01);
U.S. Cl.
CPC ...
G06F 3/064 (2013.01); G06F 3/0604 (2013.01); G06F 3/0653 (2013.01); G06F 3/0679 (2013.01); G06F 12/0646 (2013.01); G06F 2212/7202 (2013.01); G06F 2212/7204 (2013.01); G06F 2212/7206 (2013.01);
Abstract

A processing device in a memory sub-system determines whether a media endurance metric associated with a memory block of a memory device satisfies one or more conditions. In response to the one or more conditions being satisfied, a temperature of the memory block is compared to a threshold temperature range. In response to determining the temperature of the memory block is within the threshold temperature range, the processing device causes execution of a wordline leakage test of a wordline group of a set of wordline groups of the memory block. A result of the wordline leakage test of the target wordline group is determined and an action is executed based on the result of the wordline leakage test.


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