The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 23, 2024

Filed:

Jan. 20, 2020
Applicant:

Nissan Chemical Corporation, Tokyo, JP;

Inventors:

Tokio Nishita, Toyama, JP;

Takafumi Endo, Toyama, JP;

Yuki Endo, Toyama, JP;

Takahiro Kishioka, Toyama, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 7/11 (2006.01); C08F 212/14 (2006.01); C08F 220/28 (2006.01); C09D 125/18 (2006.01); C09D 133/14 (2006.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
G03F 7/11 (2013.01); C08F 212/22 (2020.02); C08F 220/282 (2020.02); C09D 125/18 (2013.01); C09D 133/14 (2013.01); H01L 21/0273 (2013.01);
Abstract

A composition for forming a protective film having excellent resistance to a wet etching solution for semiconductors during a lithographic process in the manufacture of semiconductors; a method of forming a resist pattern using said protective film; and a method for manufacturing a semiconductor device. This composition for forming a protective film against a wet etching solution for semiconductors includes: a compound or polymer which contains at least one among an acetal structure and an amide structure; and a solvent. The polymer is preferably a copolymer of: a compound (a) containing at least one acetal structure in a molecule; and a compound (b) containing at least one amide structure in a molecule.


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