The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2024
Filed:
Sep. 30, 2021
Changxin Memory Technologies, Inc., Hefei, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Abstract
A method for manufacturing a buried word line transistor can include the following operations. A semiconductor substrate having an active region is provided. A first trench is formed in the active region. A first insulation layer is formed on a side wall of the first trench. A bottom portion of the first trench is etched to form a second trench. A gate oxide layer is formed on a side wall of the first insulation layer and a bottom portion and a side wall of the second trench. A barrier layer is formed at a bottom portion and portion of a side wall of the gate oxide layer. A metal filler layer is formed on an inner side of the barrier layer. The first insulation layer is removed to form a side trench. A second insulation layer is formed at a top end of the side trench. A sealed air spacer layer is formed.