The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 16, 2024

Filed:

Jul. 14, 2021
Applicant:

Winbond Electronics Corp., Taichung, TW;

Inventors:

Yu-Lung Wang, Taichung, TW;

Yao-Ting Tsai, Taichung, TW;

Jian-Ting Chen, Taichung, TW;

Yuan-Huang Wei, Taichung, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/311 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/788 (2006.01); H10B 41/30 (2023.01);
U.S. Cl.
CPC ...
H01L 29/788 (2013.01); H01L 21/31111 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01); H01L 29/401 (2013.01); H01L 29/41775 (2013.01); H01L 29/6653 (2013.01); H10B 41/30 (2023.02);
Abstract

Provided is a semiconductor device including a substrate, multiple first gate structures, and a protective structure. The substrate includes a first region and a second region. The first gate structures are disposed on the substrate in the first region. The protective structure conformally covers a sidewall of one of the first gate structures adjacent to the second region. The protective structure includes a lower portion and an upper portion disposed on the lower portion. The lower portion and the upper portion have different dielectric materials. A method of forming a semiconductor device is also provided.


Find Patent Forward Citations

Loading…