The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2024
Filed:
Feb. 01, 2021
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Chun-Pin Fang, Tainan, TW;
Chen-Wei Pan, Hsinchu County, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/205 (2006.01); H01L 29/207 (2006.01); H01L 29/778 (2006.01); H01L 21/02 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66462 (2013.01); H01L 29/205 (2013.01); H01L 29/207 (2013.01); H01L 29/7786 (2013.01); H01L 21/0254 (2013.01); H01L 21/0257 (2013.01); H01L 29/2003 (2013.01);
Abstract
A method for fabricating a high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; performing an in-situ doping process to form a first fluorine-containing layer on the buffer layer; forming a barrier layer on the first fluorine-containing layer; forming a second fluorine-containing layer on the barrier layer; forming a gate electrode on the second fluorine-containing layer; and forming a source electrode and a drain electrode adjacent to two sides of the gate electrode.