The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2024
Filed:
Oct. 12, 2021
Applicant:
Changxin Memory Technologies, Inc., Hefei, CN;
Inventor:
ChihCheng Liu, Hefei, CN;
Assignee:
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/49 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H01L 29/4958 (2013.01); H01L 29/401 (2013.01); H01L 29/4236 (2013.01); H01L 29/42372 (2013.01); H01L 29/4966 (2013.01); H10B 12/053 (2023.02); H10B 12/34 (2023.02);
Abstract
A semiconductor device, including: a substrate; a gate oxide layer located in or on the substrate; and a gate located on a surface of the gate oxide layer, the gate including a monocrystalline silicon layer.