The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2024
Filed:
Dec. 15, 2021
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Nicolas Loubet, Guilderland, NY (US);
Christian Lavoie, Pleasantville, NY (US);
Adra Carr, Albany, NY (US);
Nicholas Anthony Lanzillo, Wynantskill, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/45 (2006.01); H01L 29/40 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/456 (2013.01); H01L 29/401 (2013.01); H01L 29/7851 (2013.01);
Abstract
A semiconductor device includes a substrate including designated source or drain (source/drain) regions. An active source/drain is in the designated source/drain regions, and a source/drain cap liner is on an upper surface of the active source/drain. The semiconductor device further includes trench silicide regions completely filed with a silicide material.