The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2024
Filed:
May. 03, 2022
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Minhyun Lee, Suwon-si, KR;
Haeryong Kim, Seongnam-si, KR;
Hyeonjin Shin, Suwon-si, KR;
Seunggeol Nam, Yongin-si, KR;
Seongjun Park, Seoul, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 21/285 (2006.01); H01L 29/04 (2006.01); H01L 29/06 (2006.01); H01L 29/267 (2006.01); H01L 29/417 (2006.01); H01L 29/45 (2006.01); H01L 29/78 (2006.01); H01L 29/16 (2006.01); H01L 29/165 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0847 (2013.01); H01L 21/28512 (2013.01); H01L 29/04 (2013.01); H01L 29/0665 (2013.01); H01L 29/0669 (2013.01); H01L 29/267 (2013.01); H01L 29/41725 (2013.01); H01L 29/45 (2013.01); H01L 29/78 (2013.01); H01L 29/1606 (2013.01); H01L 29/165 (2013.01);
Abstract
A semiconductor device includes a semiconductor layer, a metal layer electrically contacting the semiconductor layer, and a two-dimensional material layer between the semiconductor layer and the metal layer and having a two-dimensional crystal structure.