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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12040259 B1

PDFFull Text
Date of Patent:
Jul. 16, 2024

Filed:

Mar. 10, 2021

Iii-nitride-based semiconductor packaged structure and method for manufacturing the same

Applicant:

Innoscience (Suzhou) Semiconductor Co., Ltd., Suzhou, CN;

Inventors:

Shangqing Qiu, Suzhou, CN;

Lei Zhang, Suzhou, CN;

Kai Cao, Suzhou, CN;

King Yuen Wong, Suzhou, CN;

Assignee:

INNOSCIENCE (SUZHOU) SEMICONDUCTOR CO., LTD., Suzhou, CN;

Attorney:

JCIPRNET

Primary Examiner:

Evren Seven

Assistant Examiner:

Cole Leon Lindsey

Int. Cl.
CPC ...
H01L 23/495 (2006.01); H01L 21/02 (2006.01); H01L 21/60 (2006.01); H01L 23/29 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49534 (2013.01); H01L 21/02389 (2013.01); H01L 23/291 (2013.01); H01L 2021/60277 (2013.01);
Abstract

A III-nitride-based semiconductor packaged structure includes a lead frame, an adhesive layer, a III-nitride-based die, an encapsulant, and at least one bonding wire. The lead frame includes a die paddle and a lead. The die paddle has first and second recesses arranged in a top surface of the die paddle. The first recesses are located adjacent to a relatively central region of the top surface. The second recesses are located adjacent to a relatively peripheral region of the top surface. The first recess has a shape different from the second recess from a top-view perspective. The adhesive layer is disposed on the die paddle to fill into the first recesses. The III-nitride-based die is disposed on the adhesive layer. The encapsulant encapsulates the lead frame and the III-nitride-based die. The second recesses are filled with the encapsulant. The bonding wire is encapsulated by the encapsulant.

Find Patent Forward Citations

Qiu, Shangqing. (2024). Iii-nitride-based semiconductor packaged structure and method for manufacturing the same (U.S. Patent No. 12040259). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12040259

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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