The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2024
Filed:
Jun. 24, 2021
Changxin Memory Technologies, Inc., Hefei, CN;
Chihcheng Liu, Hefei, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Abstract
The present application provides a semiconductor device, which includes a shallow trench isolation structure, located in a substrate, and comprises a first region and a second region alternately arranged. The width of the first region is greater than the width of the second region. A first filling layer and a second filling layer are sequentially arranged in the first region, and a first filling layer is arranged in the second region; wherein, in the first region, the height of the first filling layer is lower than the height of the second filling layer. The device provides an advantage that the saddle-shaped shallow trench isolation structure in the first region reduces the trapping centers during any interference from adjacent word line structures, and also reduces the overlap areas of adjacent word line structures formed subsequently, thereby reducing parasitic capacitance, curtailing leakage and improving the semiconductor device's performance.