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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12040180 B1

PDFFull Text
Date of Patent:
Jul. 16, 2024

Filed:

Oct. 08, 2019

Nitride films with improved etch selectivity for 3d nand integration

Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Pramod Subramonium, Tualatin, OR (US);

Nagraj Shankar, Tualatin, OR (US);

Malay Milan Samantaray, Tualatin, OR (US);

Katsunori Yoshizawa, Tualatin, OR (US);

Bart J. VanSchravendijk, Tualatin, OR (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:

Penilla IP, APC

Primary Examiner:

Mohammad A Rahman

Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01);
U.S. Cl.
CPC ...
H01L 21/02274 (2013.01); H01L 21/02164 (2013.01); H01L 21/0217 (2013.01); H01L 21/0228 (2013.01); H01L 21/31116 (2013.01); H01L 21/76802 (2013.01); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 43/27 (2023.02); H10B 43/35 (2023.02);
Abstract

A method for depositing a nitride layer over an oxide layer to form an oxide-nitride stack is provided. The method includes supplying an inert gas to a plasma enhanced chemical vapor deposition (PECVD) reactor that supports a substrate having said oxide layer. Then, providing power to an electrode of the PECVD reactor, where the power is configured to strike a plasma. Then, flowing reactant gases into the PECVD reactor. The reactant gases include a first percentage by volume of ammonia (NH3), a second percentage by volume of nitrogen (N2), a third percentage by volume of silane (SiH4) and a fourth percentage by volume of an oxidizer. The fourth percentage by volume of said oxidizer is at least 0.5 percent by volume and less than about 8 percent by volume. Then, continuing to flow the reactant gases into the PECVD reactor until the nitride layer is determined to achieve a target thickness over the oxide layer.

Find Patent Forward Citations

Subramonium, Pramod. (2024). Nitride films with improved etch selectivity for 3d nand integration (U.S. Patent No. 12040180). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12040180

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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