The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 16, 2024

Filed:

Mar. 17, 2016
Applicant:

Hitachi Kokusai Electric Inc., Tokyo, JP;

Inventors:

Takaaki Noda, Toyama, JP;

Kotaro Konno, Toyama, JP;

Shingo Nohara, Toyama, JP;

Takeo Hanashima, Toyama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02274 (2013.01); C23C 16/401 (2013.01); C23C 16/45534 (2013.01); C23C 16/45542 (2013.01); H01J 37/32091 (2013.01); H01J 37/3244 (2013.01); H01J 37/32449 (2013.01); H01J 37/32522 (2013.01); H01L 21/02164 (2013.01); H01L 21/02211 (2013.01); H01L 21/02219 (2013.01); H01L 21/02277 (2013.01); H01L 21/0228 (2013.01);
Abstract

A technique of manufacturing a semiconductor device includes forming a film on a substrate in a process chamber by supplying a precursor and a reactant to the substrate under a first temperature at which the precursor and the reactant are not pyrolyzed, and purging, after performing the act of forming the film, an interior of the process chamber by supplying at least one selected from a group consisting of a plasma-excited gas, an alcohol, and a reducing agent into the process chamber under a second temperature equal to or lower than the first temperature.


Find Patent Forward Citations

Loading…