The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 16, 2024

Filed:

Sep. 24, 2021
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Kurt D. Beigel, Boise, ID (US);

Scott E. Sills, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/02 (2006.01); H01L 21/308 (2006.01); H01L 21/822 (2006.01); H01L 21/8238 (2006.01); H01L 27/02 (2006.01); H01L 27/06 (2006.01); H01L 27/092 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H03K 19/0948 (2006.01); H10B 63/00 (2023.01); G11C 5/14 (2006.01); G11C 7/06 (2006.01); G11C 7/12 (2006.01); G11C 8/08 (2006.01); G11C 8/10 (2006.01); G11C 29/44 (2006.01);
U.S. Cl.
CPC ...
G11C 5/025 (2013.01); H01L 21/308 (2013.01); H01L 21/8221 (2013.01); H01L 21/823828 (2013.01); H01L 21/823857 (2013.01); H01L 21/823878 (2013.01); H01L 21/823885 (2013.01); H01L 27/0207 (2013.01); H01L 27/0688 (2013.01); H01L 27/092 (2013.01); H01L 29/66742 (2013.01); H01L 29/78642 (2013.01); H03K 19/0948 (2013.01); H10B 63/00 (2023.02); G11C 5/14 (2013.01); G11C 7/06 (2013.01); G11C 7/12 (2013.01); G11C 8/08 (2013.01); G11C 8/10 (2013.01); G11C 29/4401 (2013.01);
Abstract

A semiconductor device comprises a stack structure comprising decks each comprising a memory element level comprising memory elements, and a control logic level in electrical communication with the memory element level and comprising control logic devices. At least one of the control logic devices of the control logic level of one or more of the decks comprises at least one device exhibiting a gate electrode shared by neighboring vertical transistors thereof. A control logic assembly, a control logic device, an electronic system, a method of forming a control logic device, and a method of operating a semiconductor device are also described.


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