The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 09, 2024

Filed:

May. 05, 2022
Applicant:

Macom Technology Solutions Holdings, Inc., Lowell, MA (US);

Inventors:

Kwangmo Chris Lim, San Jose, CA (US);

Basim Noori, San Jose, CA (US);

Qianli Mu, San Jose, CA (US);

Marvin Marbell, Morgan Hill, CA (US);

Scott Sheppard, Chapel Hill, NC (US);

Alexander Komposch, Morgan Hill, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/72 (2006.01); H01Q 1/52 (2006.01); H03F 1/56 (2006.01); H03F 3/19 (2006.01); H03F 3/21 (2006.01); H03H 2/00 (2006.01);
U.S. Cl.
CPC ...
H03F 3/72 (2013.01); H01Q 1/526 (2013.01); H03F 1/56 (2013.01); H03F 3/19 (2013.01); H03F 3/211 (2013.01); H03H 2/008 (2013.01);
Abstract

RF transistor amplifiers include an RF transistor amplifier die having a semiconductor layer structure, a coupling element on an upper surface of the semiconductor layer structure, and an interconnect structure on an upper surface of the coupling element so that the RF transistor amplifier die and the interconnect structure are in a stacked arrangement. The coupling element includes a first shielded transmission line structure.


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