The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2024
Filed:
May. 04, 2023
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Wen-Hao Cheng, Taichung, TW;
Yen-Yu Chen, Taichung, TW;
Chih-Wei Lin, Taichung, TW;
Yi-Ming Dai, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/56 (2006.01); H01L 21/768 (2006.01); H01L 23/31 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 24/03 (2013.01); H01L 21/56 (2013.01); H01L 21/76802 (2013.01); H01L 21/76888 (2013.01); H01L 23/3171 (2013.01); H01L 23/5226 (2013.01); H01L 24/08 (2013.01);
Abstract
A method is provided. The method includes forming an interconnect structure electrically connected to a semiconductor device; forming a tantalum-based barrier layer over the interconnect structure; oxidizing the tantalum-based barrier layer to form a tantalum oxide over the tantalum-based barrier layer; and forming a metal layer over the tantalum oxide.