The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 09, 2024

Filed:

Jun. 18, 2021
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Aykut Aydin, Sunnyvale, CA (US);

Rui Cheng, Santa Clara, CA (US);

Karthik Janakiraman, San Jose, CA (US);

Abhijit B. Mallick, Fremont, CA (US);

Takehito Koshizawa, San Jose, CA (US);

Bo Qi, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02123 (2013.01); H01L 21/02211 (2013.01); H01L 21/02271 (2013.01);
Abstract

Embodiments of the present disclosure generally relate to processes for forming silicon- and boron-containing films for use in, e.g., spacer-defined patterning applications. In an embodiment, a spacer-defined patterning process is provided. The process includes disposing a substrate in a processing volume of a processing chamber, the substrate having patterned features formed thereon, and flowing a first process gas into the processing volume, the first process gas comprising a silicon-containing species, the silicon-containing species having a higher molecular weight than SiH. The process further includes flowing a second process gas into the processing volume, the second process gas comprising a boron-containing species, and depositing, under deposition conditions, a conformal film on the patterned features, the conformal film comprising silicon and boron.


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