The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2024
Filed:
Jun. 21, 2021
Applicant:
Changxin Memory Technologies, Inc., Hefei, CN;
Inventors:
Assignee:
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01G 4/10 (2006.01); H01G 4/33 (2006.01);
U.S. Cl.
CPC ...
H01G 4/10 (2013.01); H01G 4/33 (2013.01);
Abstract
A manufacturing method for capacitor structure includes: forming a dielectric layer on a first electrode, wherein the dielectric layer includes metal oxide layers doped with preset oxides, and part of the preset oxide and a metal oxide share oxygen atoms; and forming a second electrode on the dielectric layer, wherein the first electrode, the dielectric layer and the second electrode constitute a capacitor structure.