The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 09, 2024

Filed:

Dec. 10, 2021
Applicants:

Sinoma Synthetic Crystals Co., Ltd., Beijing, CN;

Beijing Sinoma Synthetic Crystals Co., Ltd., Beijing, CN;

Inventors:

Xu Zhang, Beijing, CN;

Xun Qian, Beijing, CN;

Peng Zi, Beijing, CN;

Shen Dang, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 1/115 (2015.01); G02B 5/20 (2006.01);
U.S. Cl.
CPC ...
G02B 1/115 (2013.01);
Abstract

The present application provides a long-wave infrared anti-reflection protective film on a ZnS substrate and a preparation method thereof, wherein the ZnS substrate long-wave infrared anti-reflection protective film comprises a ZnS film layer and a YOfilm layer sequentially arranged on the ZnS substrate. The ZnS substrate has a thickness of 2-15 mm, and the ZnS film layer has a thickness of 80-120 nm, the YOfilm layer has a thickness of 1000-1300 nm, and a film structure of YOlayer gradually changes from an inside to a surface. The method for preparing a long-wave infrared anti-reflection protective film on a ZnS substrate comprises the following steps: 1) performing a polishing treatment and surface treatment on the ZnS substrate; 2) depositing a ZnS film layer on the ZnS substrate; 3) depositing a YOfilm layer on the ZnS film.


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