The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 02, 2024

Filed:

Jan. 11, 2022
Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventors:

Yiming Zhu, Hefei, CN;

Xiaoguang Wang, Hefei, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 61/00 (2023.01); H10B 12/00 (2023.01); H10B 63/00 (2023.01); H10N 50/01 (2023.01); H10N 50/80 (2023.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
H10B 61/22 (2023.02); H10B 12/05 (2023.02); H10B 12/30 (2023.02); H10B 63/00 (2023.02); H10N 50/01 (2023.02); H10N 50/80 (2023.02); H10N 70/231 (2023.02);
Abstract

The present application relates to a semiconductor structure and its forming method. The semiconductor structure comprises a substrate; a first transistor, including a first channel region disposed within the substrate, and a first end disposed at surface of the substrate, the first end being adapted to connect with a first-type storage cell; and a second transistor, including a second channel region disposed within the substrate, and a second end disposed at surface of the substrate, the second end being adapted to connect with a second-type storage cell, the first channel region and the second channel region having different areas.


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