The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 02, 2024

Filed:

Sep. 03, 2020
Applicants:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Sony Group Corporation, Tokyo, JP;

Inventors:

Yusuke Murakawa, Kumamoto, JP;

Hideaki Togashi, Kumamoto, JP;

Yoshito Nagashima, Kumamoto, JP;

Akira Furukawa, Kumamoto, JP;

Yoshihiro Ando, Kumamoto, JP;

Yasumasa Akutagawa, Kumamoto, JP;

Taku Minoda, Kumamoto, JP;

Hiroki Iwashita, Kumamoto, JP;

Takahito Niwa, Kumamoto, JP;

Sho Nishida, Kumamoto, JP;

Mikio Ishimaru, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H04N 23/67 (2023.01); H01L 27/146 (2006.01); H04N 25/704 (2023.01);
U.S. Cl.
CPC ...
H04N 23/672 (2023.01); H01L 27/14607 (2013.01); H01L 27/14609 (2013.01); H01L 27/14614 (2013.01); H01L 27/14627 (2013.01); H01L 27/1463 (2013.01); H04N 25/704 (2023.01);
Abstract

An error is reduced in phase difference detection of an imaging element including a phase difference pixel with an on-chip lens in common for a pair of pixels. The imaging element includes a pixel, an individual on-chip lens, a plurality of phase difference pixels, a common on-chip lens, and a pixel circuit. The individual on-chip lens individually collects incident light for each pixel. The phase difference pixels are arranged adjacent to each other to detect a phase difference. The common on-chip lens is arranged in common for the plurality of phase difference pixels and collects incident light in common. The pixel circuit is formed in a semiconductor substrate and generates an image signal on the basis of a transferred charge. Charge transfer units of the plurality of phase difference pixels are in a region between the common on-chip lens and the individual on-chip lens.


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