The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2024
Filed:
Sep. 09, 2021
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Yoko Iwakaji, Tokyo, JP;
Tomoko Matsudai, Tokyo, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Abstract
A semiconductor device includes: a first electrode; a first semiconductor layer located on the first electrode in a diode region; a second semiconductor layer located on the first electrode in an IGBT region; a third semiconductor layer located in the diode region, the boundary region, and the IGBT region and positioned on the first semiconductor layer and the second semiconductor layer; a fourth semiconductor layer located on the third semiconductor layer in the boundary region and the IGBT region; a fifth semiconductor layer located on the third semiconductor layer and the fourth semiconductor layer; a second electrode located in the diode region; a third electrode located in the IGBT region; and a fourth electrode extending from an upper surface of the fifth semiconductor layer toward the third semiconductor layer in the boundary region and electrically insulated from the third electrode.