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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12027460 B1

PDFFull Text
Date of Patent:
Jul. 02, 2024

Filed:

Aug. 20, 2021

Microelectronic devices including slot structures, and related memory devices, electronic systems, and methods

Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventor:

Adam W. Saxler, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:

TraskBritt

Primary Examiner:

Nduka E Ojeh

Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01);
U.S. Cl.
CPC ...
H01L 23/5283 (2013.01); H01L 21/76831 (2013.01); H01L 21/76877 (2013.01); H01L 23/5226 (2013.01); H01L 23/53266 (2013.01); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 43/10 (2023.02); H10B 43/27 (2023.02); H10B 43/35 (2023.02);
Abstract

A microelectronic device comprises a stack structure, and slot structures vertically extending through the stack structure and dividing the stack structure into block structures. Each of the slot structures individually comprises an insulative liner material vertically extending through the slot structure and contacting sidewalls of the insulative levels and the conductive levels defining the slot structure, and grains of a material in contact with sidewalls of the insulative liner material. The grains of the material comprise first grains spanning an entire width between the sidewalls of the insulative liner material. Related memory devices, electronic systems, and methods are also described.

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