The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 02, 2024

Filed:

Jul. 14, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Anhao Cheng, Hsinchu, TW;

Chun-Chang Liu, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 21/304 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 23/522 (2006.01); H01L 23/525 (2006.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 21/304 (2013.01); H01L 21/76802 (2013.01); H01L 21/76804 (2013.01); H01L 21/76807 (2013.01); H01L 21/76852 (2013.01); H01L 21/76873 (2013.01); H01L 21/76877 (2013.01); H01L 23/5226 (2013.01); H01L 23/525 (2013.01); H01L 24/02 (2013.01); H01L 24/11 (2013.01); H01L 24/20 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/05 (2013.01); H01L 24/13 (2013.01); H01L 2224/02166 (2013.01); H01L 2224/0231 (2013.01); H01L 2224/02311 (2013.01); H01L 2224/02313 (2013.01); H01L 2224/0233 (2013.01); H01L 2224/02331 (2013.01); H01L 2224/0235 (2013.01); H01L 2224/0239 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/03452 (2013.01); H01L 2224/03462 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05008 (2013.01); H01L 2224/05022 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05144 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05181 (2013.01); H01L 2224/05184 (2013.01); H01L 2224/05186 (2013.01); H01L 2224/05571 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05639 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/13022 (2013.01); H01L 2224/13024 (2013.01); H01L 2224/13082 (2013.01); H01L 2224/131 (2013.01); H01L 2224/13147 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01029 (2013.01);
Abstract

A semiconductor device includes a first conductive element electrically connected to an interconnect structure, wherein the first conductive element includes a first conductive material. The semiconductor device further includes an RDL over the first conductive element and electrically connected to the first conductive element, wherein the RDL includes a second conductive material different from the first conductive material. The semiconductor device further includes a passivation layer over the RDL, wherein a top portion of a sidewall of the second passivation layer includes a convex curve protruding in a direction parallel to a top surface of the interconnect structure, a width of the top portion at a bottom of the convex curve is less than a width of the top portion at a middle of the convex curve, and the middle of the convex curve is above the bottom of the convex curve.


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