The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 02, 2024

Filed:

Aug. 27, 2020
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Jing-Cheng Liao, Keelung, TW;

Chang-Ming Wu, New Taipei, TW;

Lee-Chuan Tseng, New Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/44 (2006.01); H01J 37/32 (2006.01); H01L 21/3065 (2006.01); H01L 21/3213 (2006.01); H01L 21/683 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32862 (2013.01); C23C 16/4405 (2013.01); H01J 37/3244 (2013.01); H01L 21/02271 (2013.01); H01L 21/3065 (2013.01); H01L 21/32136 (2013.01); H01J 2237/334 (2013.01); H01J 2237/335 (2013.01); H01L 21/6831 (2013.01);
Abstract

In some embodiments, a method for cleaning a processing chamber is provided. The method may be performed by introducing a processing gas into a processing chamber that has a by-product disposed along sidewalls of the processing chamber. A plasma is generated from the processing gas using a radio frequency signal. A lower electrode is connected to a first electric potential. Concurrently, a bias voltage having a second electric potential is applied to a sidewall electrode to induce ion bombardment of the by-product, in which the second electric potential has a larger magnitude than the first electric potential. The processing gas is evacuated from the processing chamber.


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