The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 02, 2024

Filed:

Jun. 17, 2022
Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventor:

Guifen Yang, Hefei, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 8/14 (2006.01); G11C 8/08 (2006.01);
U.S. Cl.
CPC ...
G11C 8/08 (2013.01);
Abstract

Embodiments provide a wordline driver circuit and a memory. The wordline driver circuit at least includes a first type of wordline drivers and a second type of wordline drivers, wherein each of the wordline drivers includes a PMOS transistor and an NMOS transistor. A first type of PMOS transistors in the first type of wordline drivers and a second type of PMOS transistors in the second type of wordline drivers are configured to receive different first control signals. The first type of PMOS transistors and the second type of PMOS transistors are arranged side by side, a part of the NMOS transistors in the first type of wordline drivers and the second type of wordline drivers are positioned on a side of the first type of PMOS transistors and the second type of PMOS transistors.


Find Patent Forward Citations

Yang, Guifen. (2024). Wordline driver circuit and memory (U.S. Patent No. 12027233). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12027233

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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