The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2024
Filed:
Apr. 18, 2023
Applicants:
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Inventor:
Ming Zhou, Shanghai, CN;
Assignees:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10N 50/01 (2023.01); H10N 50/80 (2023.01);
U.S. Cl.
CPC ...
H10N 50/01 (2023.02); H10N 50/80 (2023.02);
Abstract
A method for forming a semiconductor structure is provided. The method includes providing a substrate, where the substrate includes a conductive layer therein, and a surface of the substrate exposes a surface of the conductive layer; forming a groove adjacent to the conductive layer in the substrate, where the groove exposes a portion of a sidewall surface of the conductive layer; and forming a lower electrode layer in the groove and on a top surface of the conductive layer.