The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2024
Filed:
Feb. 25, 2021
Macronix International Co., Ltd., Hsinchu, TW;
Hang-Ting Lue, Hsinchu, TW;
Guan-Ru Lee, Hsinchu, TW;
MACRONIX International Co., Ltd., Hsinchu, TW;
Abstract
Provided is a memory device including a substrate, a stack structure, a polysilicon layer, a vertical channel structure, and a charge storage structure. The stack structure is disposed on the substrate. The stack structure includes a plurality of dielectric layers and a plurality of conductive layers stacked alternately. The polysilicon layer is disposed between the substrate and the stack structure. The vertical channel structure penetrates through the stack structure and the polysilicon layer. The charge storage structure is at least disposed between the vertical channel structure and the plurality of conductive layers.