The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 25, 2024

Filed:

May. 18, 2021
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Stephen D. Snyder, Boise, ID (US);

Thomas A. Figura, Boise, ID (US);

Siva Naga Sandeep Chalamalasetty, Meridian, ID (US);

Ping Chieh Chiang, Boise, ID (US);

Scott L. Light, Boise, ID (US);

Yashvi Singh, Boise, ID (US);

Yan Li, Boise, ID (US);

Song Guo, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); G11C 5/06 (2006.01); H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
H10B 12/482 (2023.02); G11C 5/06 (2013.01); H01L 27/0688 (2013.01); H10B 12/30 (2023.02); H10B 12/488 (2023.02);
Abstract

A microelectronic device comprises memory cell structures extending from a base material. At least one memory cell structure of the memory cell structures comprises a central portion in contact with a digit line, extending from the base material and comprising opposing arcuate surfaces, an end portion in contact with a storage node contact on a side of the central portion, and an additional end portion in contact with an additional storage node contact on an opposite side of the central portion. Related microelectronic devices, electronic systems, and methods are also described.


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