The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2024
Filed:
May. 05, 2022
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Ming-Yen Chuang, Hsinchu, TW;
Katherine H. Chiang, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/10 (2006.01); H01L 29/417 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78606 (2013.01); H01L 29/1037 (2013.01); H01L 29/41733 (2013.01); H01L 29/4908 (2013.01); H01L 29/66765 (2013.01);
Abstract
A semiconductor device includes a substrate and a transistor structure disposed on the substrate. The transistor structure includes a channel region and a source/drain electrode disposed on the channel region. The channel region includes a lower channel portion and a plurality of upper channel portions protruding from the lower channel portion into the source/drain electrode to form an uneven interface between the channel region and the source/drain electrode.