The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2024
Filed:
Jan. 19, 2022
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Oreste Madia, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Abstract
A method of forming a semiconductor device may include depositing a NiAl layer on a substrate, oxidizing the NiAl layer to form a bilayer including a NiO semiconducting material layer and an AlOlayer on the NiO semiconducting material layer, forming a semiconductor layer including the NiO semiconducting material layer, the semiconductor layer also including a channel region, and forming a gate dielectric on the channel region of the semiconductor layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile